The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1995
Filed:
Aug. 03, 1993
Akira Mochizuki, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The invention provides a method of forming a gate electrode on a channel layer in a field effect transistor. A first layer made of a first metal having a heat resistivity is formed on a gate formation region of a surface of a channel layer on a semiconductor substrate. The substrate is subjected to a heat treatment so as to recover a damage of the channel layer caused by the formation of the first layer. A second layer made of a second metal having a heat resistivity is formed on a surface of the first layer. A third layer made of a third metal having a low electrical resistivity is formed on a surface of the second layer thereby a gate electrode comprising the first, second and third layers is formed on the channel layer free from any damage caused by the formation steps.