The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 1995

Filed:

May. 21, 1992
Applicant:
Inventors:

Toshitsugu Takekuma, Ohme, JP;

Toshio Suzuki, Hatoyama, JP;

Hidetoshi Iwai, Ohme, JP;

Masamichi Ishihara, Hamura, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430-5 ; 430311 ;
Abstract

Pattern data of a phase shift mask can be inspected: (101) by separating and laying out pattern data of a phase shift mask in an actual pattern data layer, an auxiliary pattern data layer and a phase shift pattern data layer; (102) by inspecting and correcting only the data of the actual pattern of the actual pattern data layer; (108) by making data of an estimated pattern estimated to be transferred to a semiconductor wafer from the data of the synthetic data of the correct actual pattern data, the auxiliary pattern data and the phase shift pattern data, which are inspected and corrected; and (104) by comparing the estimated pattern data and the actual pattern data to inspect the data of the auxiliary pattern and the phase shift pattern.


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