The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 1995
Filed:
Mar. 30, 1993
Brendan T McGuckin, Pasadena, CA (US);
Robert T Menzies, Pasadena, CA (US);
Abstract
A conversion efficiency of 42% and slope efficiency of 60% relative to absorbed pump power are obtained from a continuous wave diode-pumped Tm, Ho:YLiF.sub.4 laser at 2 .mu.m with output power of 84 mW at a crystal temperature of 275 K. The emission spectrum is etalon tunable over a range of 7 nm (16.3 cm.sup.-l) centered on 2.067 .mu.m with fine tuning capability of the transition frequency with crystal temperature at a measured rate of -0.03 cm.sup.-1 .K.sup.-1. The effective emission cross-section is measured to be 5.times.10.sup.-21 cm.sup.2. These and other aspects of the laser performance are disclosed in the context of calculated atmospheric absorption characteristics in this spectral region and potential use in remote sensing applications. Single frequency output and frequency stabilization are achieved using an intracavity etalon in conjunction with an external reference etalon.