The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 1995
Filed:
Mar. 03, 1993
Applicant:
Inventors:
Arthur M Turner, Allen, TX (US);
Arturo Simmons, Anna, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257188 ; 257200 ; 257741 ; 257735 ;
Abstract
An adhesive ohmic contact made to a p-type semiconductor metal substrate or layer (10) comprises tin. The contact preferably includes a tin film (24) approximately 2000 .ANG. in thickness. The p-type semiconductor compound contains mercury and, while described in conjunction with Hg.sub.1-x Cd.sub.x Te, other elements exhibiting group II and group VI chemical behavior and properties may be used. A cap layer (30) is deposited over film (24), followed by insulating layer 32. Via (34) is then formed and, to complete contact (50), a metal (36) is deposited inside via (34).