The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 1995
Filed:
Mar. 29, 1994
Hiroshi Kitaguchi, Ibaraki, JP;
Shigeru Izumi, Tokyo, JP;
Hitachi, Ltd., , JP;
Abstract
The invention provides a high sensitivity semiconductor radiation detection apparatus having pn junctions formed in opposite surfaces of at least one semiconductor wafer. A common electrode for the pn junctions is formed in the substrate region of the semiconductor wafers, and a variable reverse bias voltage is supplied to an electrode formed in contact with at least one of the pn junctions, to vary the thickness of the depletion region generated at said pn junction, and hence the sensitivity of said junction to incident radiation of varying energy levels. By adjusting the relative thickness of the respective depletion regions, different types of radiation may be distinguished.