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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5455786 B1

PDFFull Text
Date of Patent:
Oct. 03, 1995

Filed:

Jun. 09, 1994

Ferroelectric memory

Applicant:
Inventors:

Kan Takeuchi, Kodaira, JP;

Katsumi Matsuno, Kokubunji, JP;

Yoshinobu Nakagome, Hamura, JP;

Masakazu Aoki, Tokorozawa, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:

Antonelli, Terry, Stout & Kraus

Primary Examiner:

David C Nelms

Assistant Examiner:

Son Dinh

Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365145 ; 365149 ; 365203 ;
Abstract

A highly reliable and high speed ferroelectric memory having high degree of integration is provided. In a ferroelectric memory having a plurality of memory cells M1 each constituted by one transistor and one ferroelectric capacitor. In the normal operation, the ferroelectric memory is used as a volatile memory in which a voltage of a storage node ST1 is utilized as the stored information. Both an electric potential at a plate PL1 of the ferroelectric capacitor and a precharge electric potential on a data line DL1(j) are made Vcc/2.

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Takeuchi, Kan. (1995). Ferroelectric memory (U.S. Patent No. 5455786). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5455786

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