The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 1995

Filed:

Aug. 11, 1994
Applicant:
Inventors:

Yoshio Manabe, Osaka, JP;

Ichiro Tanahashi, Osaka, JP;

Tsuneo Mitsuyu, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 63 ; 257 64 ; 257 65 ;
Abstract

This invention is directed to new non-linear optical materials and methods for manufacturing these materials. A new materials are non-oxide amorphous thin films which are doped with semiconductor microcrystallites. The use of non-oxide materials as the amorphous thin film prevents the occurrence of undesirable chemical reactions, such as the oxidation of the semiconductor microcrystallites doped therein. The disclosed materials may be manufactured by simultaneously sputtering a target of the selected semiconductor material and a target of the non-oxide amorphous material. Alternatively, reactive sputtering in a non-oxide gas environment may be utilized to deposit the non-oxide amorphous material doped with semiconductor microcrystallites.


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