The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 1995
Filed:
Jun. 18, 1993
Applicant:
Inventors:
Hikaru Kouta, Tokyo, JP;
Shoko Manako, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 13 ; 117 35 ; 117 36 ; 117944 ;
Abstract
In growing a single crystal of .beta.-BaB.sub.2 O.sub.4 from a melt of BaB.sub.2 O.sub.4 by the Czochralski method, crushed single crystal particles of either .beta.-BaB.sub.2 O.sub.4 or .alpha.-BaB.sub.2 O.sub.4 are used as the starting material of the melt. The primary advantage of using the crushed single crystal particles resides in that transformation of a polycrystal initially nucleated on a platinum rod, which is brought into contact with the melt in place of a seed crystal, to single crystal can be accomplished in a greatly shortened time. In consequnce, high quality single crystals are obtained at good yield.