The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 1995
Filed:
Jun. 30, 1994
Noriyuki Tatsumi, Tokyo, JP;
Jiro Tsujino, Tokyo, JP;
Atsushi Kume, Tokyo, JP;
Yuh Shiohara, Tokyo, JP;
Shoji Tanaka, Tokyo, JP;
Shigenori Yuhya, Hyogo, JP;
Kei Kikuchi, Kanagawa, JP;
International Superconductivity Technology Center, Tokyo, JP;
Hokkaido Electric Power Co., Inc., Hokkaido, JP;
Fujikura Ltd., Tokyo, JP;
Tokyo Gas Co., Ltd., Tokyo, JP;
Hitachi Cable, Ltd., Tokyo, JP;
Abstract
The generation of a reaction product is suppressed between a metallic substrate and plasma in depositing a ceramic intermediate layer on the metallic substrate in a process for depositing an oxide film on the metallic substrate by thermal plasma flash evaporation method. Thus, there is no reaction phase in the ceramic intermediate layer and the metallic substrate, and an intermediated buffer layer of only oxide ceramic is deposited on a flat surface of the metallic substrate. The intermediate ceramic layer is deposited in inert atmosphere of a low oxygen concentration at a temperature of less than 600.degree. C. for the metallic substrate. Then, a superconducting thin film is deposited on the ceramic intermediate layer.