The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 1995
Filed:
Jun. 08, 1994
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor laser includes a semiconductor substrate of a first conductivity type having opposite front and rear surfaces, a double-heterojunction structure including a first conductivity type lower cladding layer, an undoped active layer, and an upper cladding layer of a second conductivity type, opposite the first conductivity type, successively disposed on the front surface of the semiconductor substrate wherein the double-heterojunction structure is a mesa having opposite sides, and a light and current confinement structure disposed on the opposite sides of the mesa for confining laser light and laser driving current within the mesa. The confinement structure includes a first conductivity type mesa embedding layer, a second conductivity type mesa embedding layer, and a semi-insulating InP layer which are successively disposed on the semiconductor substrate contacting the opposite sides of the mesa. In this structure, since the semi-insulating semiconductor layer is not in contact with the active layer, unfavorable diffusion of impurities contained in the semi-insulating layer into the active layer is prevented.