The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 1995
Filed:
Apr. 20, 1994
Koichi Fujita, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A field effect transistor includes a gate electrode disposed on a first conductivity type semiconductor substrate via an insulating film, a second conductivity type region having a first dopant impurity concentration region in the substrate at the drain side of the gate electrode contacting the insulating film, a second conductivity type region in the substrate having a higher dopant impurity concentration than the first dopant impurity concentration at the source side of the gate electrode contacting the insulating film, and a first conductivity type region in the substrate having a higher dopant impurity concentration than the substrate and surrounding the source region in the substrate. The ON-resistance of the transistor is reduced. The first conductivity type region improves the drain-source breakdown voltage, suppresses variations in the threshold voltage, and reduces the gate-source and gate-drain capacitances.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile