The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 1995
Filed:
Apr. 25, 1994
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method for making a vertical profile contact opening (18) uses an etch stop layer (14), interposed between a conductor layer (10) and a dielectric layer (16), to eliminate resputtering of the underlying conductor material which prevents tapering of the etched opening (18). This contact opening formation is accomplished using different etchant chemistries, etching one film selective to the other. The use of the etch stop material in conjunction with conventional interconnect structures allows multiple stacking of contact features or multilevel interconnects to be achieved independent of underlying topography without increasing overall contact/via resistance. The method allows the fabrication of an unlanded via structure (30) having substantially vertical sidewall profile.