The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 1995
Filed:
Mar. 03, 1994
Kokusain Denshin Denwa Kabushiki Kaisha, Tokyo, JP;
Abstract
Nitrogen-doped group II-VI compound semiconductor thin film manufacturing method and apparatus which are applicable to an MOVPE process. The group II-VI compound semiconductor thin film manufacturing method according to the present invention is characterized by the use of osmium as a catalyst to activate nitrogen molecules. The growth device according to the present invention has a construction wherein a nitrogen gas introducing pipe for blowing a nitrogen gas against a semiconductor substrate is disposed in a reaction chamber for growing the group II-VI compound semiconductor thin film by the MOVPE process and the osmium is disposed between the semiconductor substrate and the nitrogen gas introducing pipe.