The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 1995
Filed:
Jun. 02, 1994
Ichiro Kasai, Solvang, CA (US);
Herbert L Hettich, Goleta, CA (US);
Stephen L Lawrence, Santa Barbara, CA (US);
Santa Barbara Research Center, Goleta, CA (US);
Abstract
The light receiving or back-side surface (22) of an indium antimonide (InSb) photodetector device (10) substrate (12) is cleaned to remove all oxides of indium and antimony therefrom. Passivation and/or partially visible light blocking layers (26, 28) are then formed thereon of a material which does not react with InSb to form a structure which would have carrier traps therein and cause flashing. The optical cutoff wavelength and thickness of the partially visible light blocking layer (28) are selected to suppress the avalanche effect in the device (10) at visible wavelengths. This enables the device (10) to operate effectively over a wide wavelength range including the visible and infrared bands. The passivation and/or partially visible light blocking layers (26, 28) may be a thin layer of a semiconductor such as germanium, or silicon dioxide and/or silicon nitride followed by a partially visible light blocking silicon layer.