The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 1995
Filed:
Feb. 08, 1994
Thomas Stockmeier, Baden-Dattwil, CH;
Uwe Thiemann, Wutoschingen, DE;
ABB Management Ltd., Baden, CH;
Abstract
A power semiconductor component having integrated protection against electrostatic destruction is published. Such a semiconductor component (1) comprises a semiconductor substrate (10) having at least one MOS structure whose gate (7) is arranged insulated from the semiconductor substrate (10). Such structures are susceptible to destruction by a dielectric breakdown of the insulation layer, caused by electrostatic charging. According to the invention, this insulating layer between-the gate electrode (3) and the main electrode (2) is now replaced by a semi-insulating layer (9) so that a limited current flow becomes possible between the gate (7) and the main electrode (2) and it is no longer possible for any potential difference to build up.