The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 1995
Filed:
Dec. 20, 1993
Kenji Hosogi, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of producing on a substrate an in-plane-gate transistor includes producing a channel portion in which a quasi-one-dimensional conductive channel electrically connecting a source region and a drain region is generated and producing gate portions, each portion including a gate electrode layer for controlling generation and forfeiture of the quasi-one-dimensional conductive channel so that an upper surface of the gate layer and the quasi-one-dimensional conductive channel are positioned substantially in the same plane, on both sides of the channel portion on the substrate. Gaps between the channel portion and the gate portions are controlled by side walls produced self-aligningly on the side wall surfaces of the channel portion. Thus, gaps of a high aspect ratio can be produced between the channel portion and the gate portions without being limited by the dry etching technique.