The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 1995
Filed:
May. 16, 1994
William J Hamilton, Jr, Ventura, CA (US);
Scott M Johnson, Santa Barbara, CA (US);
William L Ahlgren, Goleta, CA (US);
Santa Barbara Research Center, Goleta, CA (US);
Abstract
A layer (32) of a HgCdTe compound epitaxially contacts a buffer structure, which in turn epitaxially contacts a silicon substrate (22). The buffer structure is formed of II-VI compounds, and preferably includes at least one layer (24) of a ZnSeTe compound epitaxially contacting the silicon substrate (22) and a layer (30) of a CdZnTe compound overlying the ZnSeTe compound layer (24). The ZnSeTe compound layer (24) may be provided as a single graded layer having a composition of ZnSe adjacent to the silicon and a composition of ZnTe remote from the silicon, or as two distinct sublayers with a ZnSe sublayer (26) adjacent to the silicon substrate (22) and a ZnTe sublayer (28) remote from the silicon substrate (22).