The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 1995
Filed:
Apr. 06, 1994
Applicant:
Inventor:
Yoshiyasu Ueno, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 45 ; 372 96 ;
Abstract
A semiconductor laser with a semiconductor multilayer has at least one double heterostructure. There area pair of cladding layers and an active layer and, where a bandgap energy of the cladding layers is E.sub.1 and that of the active layer is E.sub.2, these bandgap energies satisfy a relation substantially E.sub.1 .gtoreq.2.times.E.sub.2. The semiconductor laser produces green SHG (second harmonic generation) light and the efficiency of producing such light is high because the cladding layers absorb substantially no SHG light.