The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 1995
Filed:
Jan. 28, 1994
Paul L Provenzano, West Hartford, CT (US);
James L Swindal, East Hampton, CT (US);
Robert J Kuhlberg, Windsor, CT (US);
Charles B Brahm, Ellington, CT (US);
Harold D Meyer, South Windsor, CT (US);
Frank W Gobetz, South Windsor, CT (US);
Walter J Wiegand, Glastonbury, CT (US);
Robert H Bullis, Avon, CT (US);
United Technologies Corporation, Hartford, CT (US);
Abstract
A silicon capacitive pressure sensor is disclosed that has a glass dielectric material sputter-deposited onto a silicon substrate of the sensor. After deposition of the bulk dielectric material, the glass is patterned and etched to form a pair of concentric rings. An inner ring is of a circular shape, while the outer ring is of an octagonal shape. As compared to prior art dielectric spacers which are of a single ring of relatively wide thickness, the pair of concentric rings disclosed herein significantly reduce the parasitic capacitance of the glass dielectric material, thereby increasing the sensitivity of the sensor.