The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 1995
Filed:
Jun. 01, 1994
Hikaru Hida, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A field effect transistor comprises a semiconductor substrate, a first layer made of a semiconductor having an electron affinity and the first layer being formed on the semiconductor substrate, a second layer made of material having electron affinity smaller than that of the first layer formed on the first layer, a length of the second layer being longer than that of the first layer, source and drain regions formed on the semiconductor substrate, the source and drain regions being separated through a lamination of the first and second layer, a gate electrode formed on the second layer, a gate length of the gate electrode being shorter than that of the second layer and being shorter than that of the first layer and the gate electrode being separated from the source and drains region through the second layer.