The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 1995
Filed:
Sep. 08, 1993
Applicant:
Inventor:
Keiichi Sano, Moriguchi, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437233 ; 437101 ; 437109 ;
Abstract
Disclosed herein is a method of preparing a polycrystalline silicon film comprising a step of forming an amorphous silicon film containing hydrogen and having an intensity ratio TA/TO of at least 0.5 of TA peak intensity to TO peak intensity in a Raman spectrum, and a step of heat treating the amorphous silicon film for converting the same to a polycrystalline silicon film.
Sano, Keiichi. (1995). Method of preparing polycrystalline silicon film (U.S. Patent No. 5447889). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5447889
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile