The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 1995
Filed:
Apr. 05, 1994
Steven S Lee, Colorado Springs, CO (US);
Kenneth P Fuchs, Colorado Springs, CO (US);
Gayle W Miller, Colorado Springs, CO (US);
AT&T Global Information Solutions Company, Dayton, OH (US);
Hyundai Electronics America, Milpitas, CA (US);
Abstract
A method for forming an amorphous silicon programable element which requires less than about one square micron of area. The method includes the steps of forming a bottom conductor, depositing an interlayer dielectric above the bottom conductor, forming a via in the interlayer dielectric, depositing an anti-fuse layer above the bottom conductor within the via, and chemical vapor depositing a conductive plug above the anti-fuse layer and within the via. The method may additionally include the step of chemical vapor depositing a top conductor above the conductive plug.