The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 1995
Filed:
Aug. 27, 1993
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A storage electrode of a capacitor of a semiconductor memory device and a method for manufacturing the same are disclosed. A first electrode of the capacitor comprises a main electrode having a plurality of microtrenches and micropillars formed therein, an outer wall surrounding the microtrenches and micropillars, a granular silicon layer formed on an outer sidewall of the outer wall, and a column electrode supporting the main electrode and electrically connecting the main electrode to a source region of a transistor of the semiconductor device. The first electrode preferably has a horizontally fin-structured auxiliary electrode formed underneath the main electrode and electrically connected to the column electrode of the first electrode. The capacitor may be formed by using an etching end-point detection layer and an HSG polysilicon layer. The effective surface area of the storage electrode of a capacitor is increased to thereby obtain adequate cell capacitance. Also, uniform shapes of the storage electrodes are preferably obtained to thereby attain uniform cell capacitance.