The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 1995
Filed:
Dec. 12, 1990
Ronald Hiskes, Palo Alto, CA (US);
Stephen DiCarolis, Santa Clara, CA (US);
Other;
Abstract
A system for MOCVD fabrication of superconducting oxide thin films provides a feed tube having a narrow slot along its length with a uniform mixture of powdered precursor materials packed inside the tube. The mixture composition is such that the resulting film has the desired stoichiometry. The tube moves downward at a controlled rate past a bank of heating lamps surrounded by a heat reflector. At each position of the tube this structure heats a localized section of the precursor material, with a sharp temperature gradient at the boundary of the section so that the heating is confined to this section. The precursor material in the heated section is substantially completely vaporized, with negligible decomposition and nonvolatile residue formation, and the vaporization rate is governed by the downward velocity of the tube. The vaporized material escapes through the longitudinal slot, and is swept by a carrier gas into a reaction zone. Oxygen is mixed with the gas stream, and the reaction products are deposited as a thin film on the substrate. A modification of this system includes coils adjacent to the reaction zone, connected to an rf generator. These coils produce a plasma in the reagent gas mixture that enhances the chemical reaction.