The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 1995
Filed:
Dec. 21, 1993
Yasuo Torimaru, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A non-volatile semiconductor memory device, includes: a memory cell including an MOS transistor for reading, an MOS transistor for writing, and an MFS transistor provided with a gate having a ferroelectric film above a channel region, one of a drain and a source of the MFS transistor having a common electric potential; a bit line for writing, to which the gate of the MFS transistor is connected through the MOS transistor for writing, and to which multivalued data having at least three voltage levels or analog data is input; a bit line for reading, to which the other of the drain and the source of the MFS transistor is connected through the MOS transistor for reading, and from which multivalued data having at least three voltage levels or analog data is read; a word line for writing connected to a gate of the MOS transistor for writing; and a word line for reading connected to a gate of the MOS transistor for reading.