The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 1995
Filed:
Feb. 08, 1994
Seo K Lee, Kyungki-do, KR;
Goldstar Electron Co., Ltd., , KR;
Abstract
A CCD type solid-state image sensor a n type silicon substrate, a first p type well formed over the substrate, photodiode regions deeply and widely formed in the first well, second p type wells formed in the first well, each of the second well being overlapped with each corresponding photodiode region and each photodiode region preceding to the corresponding photodiode region, n type VCCD channel regions respectively formed in the second wells, p type transfer gate channel regions each formed in each one of the second p type wells between each photodiode region and each corresponding VCCD channel region, p type channel stop regions respectively formed in the second wells, each of the channel stop regions being adapted to isolate each corresponding VCCD channel region from each corresponding preceding photodiode region, p type impurity regions respectively formed beneath surfaces of the photodiode regions, a thin insulating film formed over the entire exposed surface of the resulting structure, transfer gates formed on the thin insulating film to be respectively disposed over the second wells, an interlayer insulating film formed on the thin insulating film to cover the transfer gate electrodes, and a photoshield film formed over the entire exposed surface of the resulting structure except for portions respectively disposed over the photodiode regions.