The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 1995
Filed:
Feb. 03, 1995
Applicant:
Inventor:
Shigeru Nakajima, Yokohama, JP;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257194 ; 257280 ; 257285 ; 257287 ; 257472 ;
Abstract
In this MESFET, an undoped AlInAs layer 120, an undoped InP layer 130, an n-InGaAs layer 140, an undoped InP layer 150, and an AlInAs layer 160 are formed on a semi-insulating InP substrate 110. A source electrode 410, a drain electrode 430, and a gate electrode 420 are formed on the AlInAs layer 160. The source electrode 410 and the drain electrode 430 are in ohmic contact with the AlInAs layer 160, and the gate electrode 420 forms a Schottky junction with the AlInAs layer 160.