The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 1995
Filed:
May. 05, 1994
Hiroyuki Tokunaga, Fujisawa, JP;
Tadashi Atoji, Machida, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor film having a very high light response of photoconductivity and good electrical characteristics such a wide band gap, for example, a non-monocrystalline silicon carbide film, is formed by decomposition reaction of a silicon-containing raw material gas and a hydrocarbon as a carbon raw material under light irradiation or high frequency, where the carbon raw material gas comprises at least one of tertiary and quaternary carbon atom-containing hydrocarbons of specific chemical formulae, and a semiconductor device using the thus formed semiconductor film is also provided.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile