The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 1995
Filed:
Dec. 23, 1994
Applicant:
Inventor:
Jong H Lee, Taegu, KR;
Assignees:
Kyungdook National University Sensor Technology Research Center, Taegu, KR;
Mando Machinery Corporation, Kyungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
216-2 ;
Abstract
A method for fabricating a silicon diaphragm comprises the steps of preparing an n-type silicon substrate; diffusing n.sup.+ impurities in the silicon substrate to form an n.sup.+ diffusion region in a part of the upper wall thereof; growing an n-type silicon epitaxial layer thereon; forming a through-hole in the n-type silicon epitaxial layer to expose a part of the n.sup.+ diffusion region; performing an anodic reaction in an HF solution to make the n.sup.+ diffusion region a porous silicon layer; etching the porous silicon layer to form an air-gap;and, sealing the through-hole.