The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 1995
Filed:
Jun. 01, 1993
Tadashige Satoh, Ushiku, JP;
Hisanori Fujita, Ushiku, JP;
Mitsubishi Kasei Polytec Company, Tokyo, JP;
Mitsubishi Kasei Corporation, Tokyo, JP;
Abstract
In order to grow a GaAs.sub.1-x P.sub.x fixed-composition layer of excellent quality, which has a predetermined composition x, over a GaAs or GaP single crystal substrate, a varied-composition layer is formed between the substrate and the fixed-composition layer. The varied-composition layer comprises at least two varied-composition layer portions and at least one fixed-composition layer portion with a predetermined thickness that is formed between the varied-composition layer portions, whereby dislocations caused by lattice mismatch with the GaP substrate are settled in the varied-composition layer portions and recovered in the fixed-composition layer portion between the varied-composition layer portions, thereby minimizing the dislocations, and thus making it possible to obtain a GaAs.sub.1-x P.sub.x layer of excellent crystal quality, which has a predetermined composition x.