The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 1995
Filed:
May. 12, 1994
Yoshinobu Kawata, Fukuoka, JP;
Toshinobu Banjo, Fukuoka, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A treatment utilizing chemical vapor deposition is conducted on a major treatment surface (14) of a semiconductor substrate (8) under the condition where the semiconductor substrate (8) is held on a bottom surface of a stage (10) by suction force which is caused by reducing pressure in a vacuum pocket (13). In such a treatment, inert gas supplied by an inert gas feeder (24) is fed through a fluid duct (43) and inert gas feed holes (52) to an inert gas jetting gap (32) which is a space between an outermost circular surface (31) of an outer portion of a substrate holding surface (11) and a reverse major surface (12) of the semiconductor substrate (8). The inert gas is jetted out of the inert gas jetting gap (32) to a reaction chamber (6). Jets of the inert gas prevents undesirable objects or reaction byproduct (34) from easily penetrating in an inner region of the substrate holding surface (11). Thus, deposition of the reaction byproduct is prevented, and reduction of strength of holding the semiconductor substrate by suction force is avoided. As a result, operating efficiency of a semiconductor manufacturing apparatus and the yield are enhanced.