The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 1995
Filed:
Nov. 22, 1993
Applicant:
Inventors:
Scott S Roth, Austin, TX (US);
Howard C Kirsch, Austin, TX (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117-8 ; 117-9 ; 117 10 ; 437 21 ; 437 61 ; 437228 ;
Abstract
A silicon-on insulator film (38) is formed by solid phase epitaxial re-growth. A layer of amorphous silicon (36) is formed such that it is only in direct contact with an underlying portion of a silicon substrate (12). The layer of amorphous silicon (36) is subsequently annealed to form a monocrystalline layer of epitaxial silicon (38). Because the amorphous silicon layer (36) is in contact with only the silicon substrate (12), during the re-growth process, the resulting epitaxial layer (38) is formed with a reduced number of crystal defects. The resulting epitaxial silicon layer (38) may then be used to form semiconductor devices.