The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1995
Filed:
May. 17, 1994
Applicant:
Inventor:
Kuniyoshi Yoshikawa, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365185 ; 36518909 ; 365218 ;
Abstract
A semiconductor memory device includes a silicon chip, a memory cell transistor formed in the chip, a charge pump circuit formed in the chip, for boosting a source potential to generate a boosted potential, and a switching circuit formed in the chip. The switching circuit switches the portions to which the boosted voltage is supplied, depending on whether data is being written or erased. When writing data, the boosted potential is led to a drain of the memory cell transistor. When erasing data, the boosted potential is led to a source of the memory cell transistor.