The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1995
Filed:
Dec. 23, 1992
Jin Y Chung, Seoul, KR;
Deog Y Kwak, Seoul, KR;
Goldstar Electron Co., Ltd., Cheongju, KR;
Abstract
A back-bias voltage generating circuit of a semiconductor device having a driving signal generating portion for receiving oscillating signals from an oscillator such as a ring oscillator and generating alternating high and low driving signals, a first pumping portion for charging the input driving signal at one electrode of a pumping capacitor so as to produce a voltage at the other electrode of the pumping capacitor lower than a back-bias voltage, a second pumping portion for charging another input driving signal at one electrode of a second pumping capacitor so as to produce a voltage at the other electrode of the second pumping capacitor lower than a back-bias voltage, a first switching portion being turned on by a voltage higher than a back-bias voltage and connecting the other electrode of the pumping capacitor to a back-bias voltage terminal when the voltage of this electrode is below the back-bias voltage, and a second switching portion being turned on by a voltage higher than a back-bias voltage and connecting the other electrode of the second pumping capacitor to a back-bias voltage terminal when the voltage of the second pumping portion is below the back-bias voltage.