The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1995
Filed:
Jun. 10, 1993
Chang-kyu Kim, Suwon, KR;
Myeong-beom Lee, Seoul, KR;
Ji-hyun Choi, Seoul, KR;
Woo-in Joung, Kyungki-do, KR;
Young-jin Im, Seoul, KR;
Won-joo Kim, Kyungki-do, KR;
Jin-gi Hong, Kyungki-do, KR;
Geung-won Kang, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
The present invention forms a intermediate layer between a conductive layer and BPSG layer. In one embodiment, this intermediate layer is a buffer layer that absorbs excess P ions from the BPSG layer to suppress the formation of bubbles and thereby prevent short circuits that may be caused due to the presence of bubbles in the BPSG layer. In the second embodiment the intermediate layer is a thin nitride layer, which prevents the conductive layer and BPSG layer from being in direct contact with each other to suppress the formation of bubbles and also prevent short circuits that may be caused due to the presence of bubbles in the BPSG layer.