The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1995
Filed:
Jun. 10, 1994
Mohammed Anjum, Austin, TX (US);
Ibrahim K Burki, Austin, TX (US);
Craig W Christian, Buda, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method is provided for controlling growth of silicide to a defined thickness based upon the relative position of peak concentration density depth within a layer of titanium. The titanium layer is deposited over silicon and namely over the silicon junction regions. Thereafter the titanium is implanted with argon ions. The argon ions are implanted at a peak concentration density level corresponding to a depth relative to the upper surface of the titanium. The peak concentration density depth can vary depending upon the dosage and implant energies of the ion implanter. Preferably, the peak concentration density depth is at a midpoint between the upper and lower surfaces of the titanium or at an elevational level beneath the midpoint and above the lower surface of the titanium. Subsequent anneal of the argon-implanted titanium causes the argon atoms to occupy a diffusion area normally taken by silicon consumed and growing within overlying titanium. However, based upon the presence of argon, the diffusion length and therefore the silicide thickness is reduced to a controllable amount necessary for applications with ultra-shallow junction depths.