The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1995
Filed:
Oct. 22, 1993
In S Chung, Ichonkun, KR;
Youn J Kim, Bundangku, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungkido, KR;
Abstract
A method for making a contact hole during manufacture of a semiconductor device. The method whereby, in a state that there is formed an arrangement which consists of one or more conductive materials insulated with a first insulating film on a contact region, a contact hole is so formed on the contact region as not to electrically connect with the arrangement, comprising the steps of: applying an etching process to the first insulating film to expose a part of the conductive material by means of a photosensitive pattern, said first insulating film remaining in part; removing the exposed part of the conductive material by means of etching; forming a second insulating film to a predetermined thickness over the resulting structure taking into consideration of the size of the contact hole desired; applying an anisotropic etching process to the second insulating film to form a spacer insulating film; and etching the remaining first insulating film along the spacer insulating film so as to form the contact hole on the contact region. The method results in improved device reliability and improved production yield.