The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1995
Filed:
Oct. 13, 1993
Applicant:
Inventors:
Seung-ku Lee, Kwangmyeong, KR;
Kyung-seok Oh, Suwon, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437195 ; 148D / ; 437189 ; 437228 ; 437981 ; 257774 ; 257775 ;
Abstract
A method for forming contact holes having different depths in an insulating layer which covers a semiconductor substrate. A first step selectively etches the upper parts of the insulating layer which correspond to contact holes having a greater depth than the shallowest contact hole, using a first mask pattern. A second etch step selectively etches the remainder of the insulating layer for all of the contact holes at the same time using a second mask pattern. Thus, contact hole misalignment is kept to a minimum.