The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 1995
Filed:
May. 25, 1994
Yoshihiro Kokubo, Itami, JP;
Seiji Minamihara, Itami, JP;
Kouji Yamashita, Itami, JP;
Katsuhiko Goto, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor laser includes a semiconductor substrate of a first conductivity type, a gain guiding structure comprising of a first conductivity type, a lower cladding layer disposed on the substrate, an active layer disposed on the lower cladding layer and having a light emitting region, and an upper cladding layer of a second conductivity type, opposite the first conductivity type, disposed on the active layer, and a multiquantum barrier layer interposed between the upper cladding layer and the active layer excluding the light emitting region. In this structure, the multiquantum barrier layer reduces leakage current flowing outside of the light emitting region of the active layer and increases effective current flowing into the light emitting region, whereby the light output of the laser is significantly increased.