The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 1995
Filed:
Sep. 14, 1993
Jae S Jeong, Seoul, KR;
Min H Park, cheongju-si, KR;
Goldstar Electron Co., Ltd., , KR;
Abstract
A DRAM cell and a method for fabricating the same capable of obtaining a large capacitance for achieving a high integration and yet maintaining superior characteristics of elements. A capacitor structure is provided, which includes a common storage node formed at the inner wall of a trench, and two plate electrodes connected to each other in parallel, that is, a substrate and a polysilicon layer formed over the storage node via a second dielectric film and connected to the substrate in parallel. With such a capacitor structure, the capacitance per unit capacitor area can be maximized. A source, a drain and a gate channel of each transistor and a capacitor storage node are formed by a single layer. With this structure, a minimum information transmitting path is obtained, thereby enabling the overall structure and the fabrication therefor to be simplified. Furthermore, the present invention makes it easy to form an active region where elements are formed, without using an element isolation process. Accordingly, overall fabrication becomes simplified.