The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 1995
Filed:
Oct. 28, 1993
Applicant:
Inventor:
Kaoru Kanehachi, Tokyo, JP;
Assignee:
Nippon Precision Circuits Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257296 ; 257298 ; 257306 ; 257315 ; 257321 ;
Abstract
A semiconductor device has a DRAM portion forming a cache memory and a flash memory portion fabricated on a common substrate, fabricated by a process based on the process of fabricating the flash memory portion. An electrode layer common to capacitors of the DRAM portion and a floating gate layer of the flash memory portion are formed simultaneously from the same material. An electrode layer of the upper capacitor of the DRAM portion, a gate electrode layer for a transistor of the DRAM portion, and a control gate layer of the flash memory portion are formed simultaneously from the same material.