The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 1995
Filed:
Jun. 28, 1994
Masahiko Hata, Tsukuba, JP;
Noboru Fukuhara, Tsukuba, JP;
Hiroaki Takata, Tsukuba, JP;
Katsumi Inui, Tsukuba, JP;
Sumitomo Chemical Company, Limited, Osaka, JP;
Abstract
A semiconductor epitaxial substrate and a process for producing the same, the semiconductor epitaxial substrate comprising a GaAs single-crystal substrate having thereon an In.sub.y Ga.sub.(1-y) As (0<y.ltoreq.1) crystal layer as a channel layer, the composition and the thickness of the In.sub.y Ga.sub.(1-y) As layer being in the ranges within the elastic deformation limit of crystals constituting the In.sub.y Ga.sub.(1-y) As layer and the vicinity of the In.sub.y Ga.sub.(1-y) As layer, the semiconductor epitaxial substrate further comprising a semiconductor layer between the channel layer and an electron donating layer for supplying electrons to the channel layer, the semiconductor layer having a thickness of from 0.5 to 5 nm and a bandgap width within the range of from the bandgap width of GaAs to the bandgap width of the electron donating layer.