The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 1995
Filed:
Apr. 06, 1994
Naresh Chand, Berkeley Heights, NJ (US);
Robert B Comizzoli, Belle Mead, NJ (US);
John W Osenbach, Kutztown, PA (US);
Charles B Roxlo, Bridgewater, NJ (US);
Won-Tien Tsang, Holmdel, NJ (US);
AT&T Corp., Murray Hill, NJ (US);
Abstract
Disclosed are high reliability semiconductor lasers that need not be maintained inside a hermetic enclosure. Such lasers can advantageously be used in a variety of applications, e.g., in optical fiber telecommunications, and in compact disc players. Such 'non-hermetic' lasers comprise facet coatings that comprise a dielectric layer that has very low water saturation value. In preferred embodiments this dielectric layer is SiO.sub.x (1.ltoreq.x<2), deposited by a molecular beam method. Deposition conditions are selected to result in a dense material that is largely free of particulates and blisters, and is substantially impermeable to moisture. Among the deposition conditions is substantially normal beam incidence, and a relatively low deposition rate. Deposition is advantageously carried out under relatively high vacuum conditions. A quantitative method of determining the water level in a SiO.sub.x film is disclosed.