The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 1995
Filed:
Jul. 13, 1994
Applicant:
Inventor:
Benoit Giffard, Grenoble, FR;
Assignee:
Commissariat a l'Energie Atomique, Paris, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 40 ; 437 21 ; 437913 ; 148D / ;
Abstract
Method for producing a silicon technology transistor on a nonconductor. This method consists in particular of forming a thin film of silicon (6) on a nonconductor (4) and then a mask (8, 10) including one opening (13) at the location provided for the channel (26) of the transistor; of locally oxidizing (14) the unmasked silicon to form an oxidation film; of eliminating the mask; of forming source (18) and drain (20) regions in the silicon by ion implantation with the oxidation film being used to mask this implantation; of eliminating the oxidation film; and of forming a thin gate nonconductor between the source and the drain and then forming the gate.