The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 1995
Filed:
Aug. 01, 1994
Kazuo Asami, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
In a memory unit having a sense amplifier for reading data, the dependence of the memory cell current detection level of the sense amplifier on the power source voltage is restrained. A memory-unit sense amplifier includes a bias circuit (20, 21, 22) for generating an output which mitigates fluctuations in the power source voltage VDD; and a detection result output section (10, 15) which outputs a memory cell current detection result obtained for the purpose of obtaining the value of memory cell data and which has a Pch (P-channel transistor), to the gate of which the output of the bias circuit (20, 21, 22) is connected, whereby fluctuations in the source/gate voltage of the Pch 10 are mitigated so as to restrain the dependence of the memory cell current detection level on the power source voltage.