The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 1995
Filed:
May. 31, 1994
Yuichi Egawa, Sagamihara, JP;
Yasuo Sato, Sagamihara, JP;
Nippon Steel Corporation, Tokyo, JP;
Abstract
A semiconductor device and a method of fabricating the semiconductor device are disclosed in which the method comprises the steps of forming an insulating film for element-isolation and a gate insulating film on a surface of a semiconductor substrate, forming a semiconductor film on the element-isolation insulating film and the gate insulating film, removing a part of the semiconductor film corresponding to a boundary between a first region for formation of an N-channel transistor and a second region for formation of a P-channel transistor, introducing N type impurities into a part of the semiconductor film located on the first region and introducing P type impurities into a part of the semiconductor film located on the second region, forming a metallic film over the semiconductor film having the impurities introduced therein and the element-isolation insulating film, and patterning the metallic film and the semiconductor film into a pattern of a gate electrode common to the N-channel transistor and the P-channel transistor.