The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 1995
Filed:
Feb. 01, 1994
Applicant:
Inventors:
Kazushi Hayashi, Kobe, JP;
Takeshi Tachibana, Kobe, JP;
Assignee:
Kabushiki Kaisha Kobe Seiko Sho, Kobe, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257763 ; 257 77 ; 257764 ; 257770 ; 437192 ;
Abstract
Disclosed is a heat-resistant ohmic contact formed on a semiconducting diamond. It has a contact Ti layer having a thickness of 10 to 70 .ANG. and a carbide layer generated by the reaction between the Ti layer and the semiconducting diamond layer. A diffusion prevention layer composed of at least one kind material selected from a group consisting of refractory metals including W, Mo, Au, Pt and Ta, refractory alloys including Ti-W, and refractory compounds including TiC and TiN is formed on the contact Ti layer. With this construction, the diffusion and the oxidation of Ti can be prevented.