The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 1995

Filed:

Feb. 04, 1994
Applicant:
Inventor:

Israel A Lesk, Phoenix, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257612 ; 257610 ; 257617 ; 257928 ; 437 10 ; 437 13 ; 437 21 ;
Abstract

Reactor atoms (22) are introduced into a silicon substrate (10) by ion implantation to combine with metal impurities (18) to form stable chemical compounds (24). The stable compounds do not decompose and release the metal impurities during subsequent processing steps. Such metal impurities are detrimental to semiconductor devices formed in active regions (16, 17) in the silicon substrate. The reactor atoms such as sulfur are chosen to be substantially immobile in silicon at normal semiconductor processing temperatures. The metal impurities such as iron are effectively gettered to increase performance and reliability of semiconductor devices formed in the active regions (16, 17) in the silicon substrate.


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