The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 1995
Filed:
Mar. 01, 1994
Mitsuru Sakamoto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A device isolation area structure in a semiconductor device is composed of two layers of a first device isolation film formed by selectively oxidizing a surface of a silicon substrate, and a second device isolation region formed in a single crystal silicon film covering the first device isolation film. A guard band region may be formed within the semiconductor substrate and immediately below the first device isolation film so as to be in contact with the first device isolation film. The device isolation area structure is suitable to high integration of the semiconductor device and provides less possibilities of occurrence of crystal defects.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile