The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 1995
Filed:
Mar. 17, 1994
Isao Murase, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A field effect transistor includes a source electrode and a drain electrode disposed on a compound semiconductor substrate, a gate electrode having a T-shaped cross-section, and a gate pad having a T-shaped cross-section disposed at one side of the gate electrode, the gate electrode and the gate pad having a reinforcing thin metal film reinforcing the gate electrode on the rear surface of an overhanging portion of the head of the gate electrode and gate pad. Therefore, the head of the gate electrode is hardly ever separated from the leg of the gate electrode and a highly reliable T-shaped gate electrode is obtained. The gate electrode leg is produced using a thin film to which a pattern of the gate electrode is transcribed as a mask, thereby reducing the length of the head of the gate electrode. Accordingly, a T-shaped gate electrode is located in a deeper gate recess than ever without causing deterioration in the repeatability of its production.